On codes for flash memory
نویسنده
چکیده
The problems of writing data and error correction for flash memories are discussed.
منابع مشابه
Worst-case and Average-case Floating Codes for Flash Memory
Flash memory is used in portable electronic devices like cell phones, mp3 players, digital cameras, and PDAs. The question of how to code information in flash memory is a difficult one whose answer can have effects on the speed and lifespan of a chip of flash memory. The main factor to be taken into account when designing codes for flash memory is the difference in cost between decreasing and i...
متن کاملGeometric WOM codes and coding strategies for multilevel flash memories
This paper investigates the design and application of write-once memory (WOM) codes for flash memory storage. Using ideas from Merkx [1], we present a construction of WOM codes based on finite Euclidean geometries over F2. This construction yields WOM codes with new parameters and provides insight into the criterion that incidence structures should satisfy to give rise to good codes. We also an...
متن کاملImplementing NAND Flash Controller using Product Reed Solomon code on FPGA chip
Reed–Solomon (RS) codes are widely used to identify and correct errors in storage systems and transmission and. When RS codes are used for so many memory system and reduces error in data. (255, 223) product ReedSolomon (RS) for non-volatile NAND flash memory systems. Reed-Solomon codes are the most used in digital data storage systems, but powerful for tool burst errors . To correct multiple ra...
متن کاملThe Devil Is in the Details: Implementing Flash Page Reuse with WOM Codes
Flash memory is prevalent in modern servers and devices. Coupled with the scaling down of flash technology, the popularity of flash memory motivates the search for methods to increase flash reliability and lifetime. Erasures are the dominant cause of flash cell wear, but reducing them is challenging because flash is a write-once medium— memory cells must be erased prior to writing. An approach ...
متن کاملOn the Use of Strong BCH Codes for Improving Multilevel NAND Flash Memory Storage Capacity
This paper investigates the potential of using strong BCH codes to improve multilevel data-storage NAND Flash memory capacity. Current multilevel Flash memories store 2 bits in each cell. Further storage capacity may be achieved by increasing the number of storage levels per cell, which nevertheless will largely degrade the raw storage reliability. Based on a Gaussian-like memory cell threshold...
متن کامل